| PART |
Description |
Maker |
| SML10SIC06SMD |
10 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-276AB
|
SEMELAB LTD
|
| C3D04060F |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC TO-220F2, FULL PACK-2
|
Cree, Inc.
|
| C3D04060E |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-252 TO-252, 3 PIN
|
Cree, Inc.
|
| STPSC1206D STPSC1206 |
600 V power Schottky silicon carbide diode
|
STMicroelectronics
意法半导
|
| SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package
600V Silicon Carbide Ultrafast Schottky Diode
Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package
Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SHD620150P |
HERMETIC SILICON CARBIDE RECTIFIER 20 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
| EFM301L EFM302L EFM303L EFM304L EFM305L EFM306L EF |
3 A, 150 V, SILICON, RECTIFIER DIODE
3 A, 600 V, SILICON, RECTIFIER DIODE
SURFACE MOUNT GLASS PASSIVATED SUPER FAST SILICON RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 3.0 Ampere
3 A, 200 V, SILICON, RECTIFIER DIODE
|
RECTRON LTD
Rectron Semiconductor
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NXPSC04650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| CPMF-1200-S080B |
Silicon Carbide MOSFET
|
CREE
|
| C3D04065E |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
|
